Regrowth dynamics of InAs quantum dots on the GaAs circular mesa

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 342-345

  Xie, Zhigang ^a   Wei, Fang ^b   Cao, Hui ^b   Solomon, Glenn S ^a  

^a STANFORD UNIVERSITY   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

A1. Diffusion length; A2. Regrowth; A3. Quantum dots; B1. InAs

Indexed keywords

CAMERAS; CHARGE COUPLED DEVICES; DIFFUSION; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

DIFFUSION LENGTH; INAS; REGROWTH; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 18444410284     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.062     Document Type: Conference Paper

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