Interface disorder of Zn1-xCdxTe/ZnTe multiple quantum wells grown by MBE using RHEED intensity oscillations

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 311-315

  Park, S H ^a   Chang, J H ^a   Jung, M N ^a   Park, Y K ^b   Goto, K ^b   Yao, T ^b  

^a Korea Maritime University   (South Korea)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Alloy fluctuation; A1. Interface disorder; A1. PL line width; A1. RHEED intensity oscillation; A3. Multiple quantum wells; B2. Semiconducting II VI materials

Indexed keywords

HEAT TREATMENT; INTERFACES (MATERIALS); METHANOL; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SURFACE PHENOMENA; X RAY DIFFRACTION ANALYSIS;

ALLOY FLUCTUATION; INTERFACE DISORDERS; PL LINE WIDTH; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED); RHEED INTENSITY OSCILLATIONS; SEMICONDUCTING II-VI MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 18444403485     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.026     Document Type: Conference Paper

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