Gain spectra and saturation power of asymmetrical multiple quantum well semiconductor optical amplifiers

IEE Proceedings: Optoelectronics

Volumn 152, Issue 2, 2005, Pages 131-139

  Lysak, V V ^a,d   Kawaguchi, H ^b   Sukhoivanov, I A ^c,d  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b YAMAGATA UNIVERSITY   (Japan)

^c UNIVERSITY OF GUANAJUATO   (Mexico)

^d KHARKIV NATIONAL UNIVERSITY OF RADIO ELECTRONICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BANDWIDTH; COMPUTER SIMULATION; MATHEMATICAL MODELS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMIONIC EMISSION;

GAIN BANDWIDTH; GAIN SPECTRA; MULTIPLE QUANTUM WELLS (MQW); SEMICONDUCTOR OPTICAL AMPLIFIERS (SOA);

LIGHT AMPLIFIERS;

EID: 18444403149     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20045021     Document Type: Article

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