Growth property of silicon nanowires under OAG

International Journal of Modern Physics B

Volumn 19, Issue 1-3, 2005, Pages 683-685

  Zhu, Yabo ^a   Zhu, Yaqun ^b  

^a CHINA UNIVERSITY OF MINING AND TECHNOLOGY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Growth direction; Silicon nanowire; Surface energy

Indexed keywords

SILICON; SILICON DERIVATIVE;

CHEMICAL MODEL; CONFERENCE PAPER; ENERGY;

EID: 18444401727     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217979205029328     Document Type: Conference Paper

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