Peculiarities of the track formation in InP and GaAs crystals

Vacuum

Volumn 78, Issue 2-4, 2005, Pages 353-359

  Komarov, F F ^a,d   Vlasukova, L A ^a   Yuvchenko, V N ^a   Petlitzkaya, T V ^b   Zukowski, P ^c  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b Research and Design Company Belmicrosystems   (Belarus)

^c LUBLIN UNIVERSITY OF TECHNOLOGY   (Poland)

^d BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

Atomic force microscopy; Heavy ion irradiation; InP and GaAs crystals; Modified thermal spike model; Selective chemical etching; Tracks

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ETCHING; HEAVY IONS; IRRADIATION; SEMICONDUCTING GALLIUM ARSENIDE;

HEAVY ION IRRADIATION; ION INELASTIC COLLISIONS; MODIFIED THERMAL SPIKE MODELS; SELECTED CHEMICAL ETCHING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 18444396899     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.01.110     Document Type: Conference Paper

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