|
|
Volumn 63, Issue 4, 2001, Pages 657-663
|
|
Damage evolution and track formation in crystalline InP and GaAs during swift Kr and Xe ion irradiation
a
|
|
Author keywords
AIIIBV semiconductors; Defects; Heavy ions; High energy implantation; Radiation damage; Thermal spikes; Tracks
|
|
Indexed keywords
CRYSTAL DEFECTS;
ETCHING;
HEAVY IONS;
HIGH TEMPERATURE EFFECTS;
ION IMPLANTATION;
IRRADIATION;
KRYPTON;
MICROSCOPIC EXAMINATION;
RADIATION DAMAGE;
RECRYSTALLIZATION (METALLURGY);
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
TRANSMISSION ELECTRON MICROSCOPY;
XENON;
HIGH-ENERGY IMPLANTATION;
THERMAL SPIKES;
CRYSTALLINE MATERIALS;
|
|
EID: 0035899416
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0042-207X(01)00254-8 Document Type: Article |
|
Times cited : (18)
|
|
References (4)
|
