Electrical properties of InAs thin films grown directly on GaAs(1 0 0) substrates by MBE

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 614-618

  Geka, Hirotaka ^a   Shibasaki, Ichiro ^a   Okamoto, Atsushi ^a  

^a ASAHI KASEI CORPORATION   (Japan)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B1. Indium arsenide

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTRATES; TEMPERATURE DISTRIBUTION; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ELECTRICAL EQUIPMENTS; HETEROINTERFACE; INDIUM ARSENIDE; TWO-LAYER STRUCTURES;

INDIUM COMPOUNDS;

EID: 18444394048     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.081     Document Type: Conference Paper

References (10)

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