Changes in morphology and growth rate of quasi-one-dimensional ZnSe nanowires on GaAs (1 0 0) substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 279, Issue 3-4, 2005, Pages 248-257

  Leung, Y P ^a   Liu, Z ^a   Hark, S K ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

A1. Low dimensional structure; A3. Metalorganic chemical vapor deposition; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; ENERGY DISPERSIVE SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

GROWTH PRESSURE; LOW DIMENSIONAL STRUCTURES; NANOWIRES; OPTIMUM TEMPERATURE;

ZINC COMPOUNDS;

EID: 18444375891     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.02.025     Document Type: Article

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