Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 879-884

  Croci, S ^a   Voisin, J M ^a   Plossu, C ^a   Raynaud, C ^a   Autran, J L ^a   Boivin, P ^b   Mirabel, J M ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); MOSFET DEVICES; OXIDES; PROM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

FOWLER-NORDHEIM TUNNELING PARAMETERS; THIN GATE OXIDES;

ELECTRON TUNNELING;

EID: 0033143163     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00117-1     Document Type: Article

References (20)

1. M. Depas, B. Vermeire, P.W. Mertens, R.L. Van Meirhaeghe and M.M. Heyns, Solid-State Electron. 38, 1465 (1995).
2. M. Lenzlinger and E. Snow, J. Appl. Phys. 40, 278 (1969).
3. S. Horiguci and H. Yosshino, J. Appl. Phys. 58, 1597 (1985).
4. E.O. Sheybani and Y.L. Chiou, Proc. of Southcon'94 (Mar.94,Orlando, Fl), 149 (1994).
5. th Biennal University-Government-Industry Microelectronic Symp. (Jun.1991, Malbourne Fl), 89 (1991).
6. G. Keiger and R.M. Swanson, J. Appl. Phys. 52, 5710 (1981).
7. Z.A. Weinberg, J. Appl. Phys. 53, 5052 (1982).
8. S.N. Mohammad, G. Fiorenza, A. Acovic, J.B. Johnson and R;L. Carter, Solid-State Electron. 38, 807 (1995).
9. T. Ando, A;B; Fowler and F. Stern, Rev. Mod. Phys. 58, 437 (1998).
10. F. Stern, Phys. Rev. B 5, 4891 (1972).
11. C. T. Hsing, D.P. Kennedy, A.D. Sutherland and K.M. Van Vliet, Phys. Stat. Sol. (a) 56, 129 (1979).
12. J. Suné, P. Olivo and B. Ricco, IEEE Trans. Electron Device 39, 1732 (1992).
13. T. Ando, Phys. Rev. B 13, 3468 (1976).
14. P. Olivo, J. Suné and B. Ricco, IEEE Electron Device Lett. 12, 620 (1991).
15. T.H. Ning, C.M. Osburn and H.N. Yu, J. Appl. Phys. 48, 286 (1977).
16. K.R. Hofmann, C. Werner, W. Weber and G. Dorda, IEEE Trans. Electron. Devices 32, 691 (1985).
17. R. Benz, D. Cantarelli and P. Cappelletti, IEEE Trans. Electron Device 37, 1081 (1990).
18. Z.A. Weinberg, Solid-State Electron. 22, 11 (1977).
19. R.J. Van Overstraeten, G.J. Declerck and P.A. Muls, IEEE Trans. Electron Device 22, 282 (1975).
20. C. Plossu, J.M. Voisin, B. Bos, C. Raynaud, R. Bouchakour, P. Boivin and B. Balland, J. Non Cryst. Sol. 245, 85 (1999).