Transient analysis of impact ionization anisotropy using realistic band structure for GaAs

Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998

Volumn 1998-October, Issue , 1998, Pages 202-205

  Jung, H K ^a   Nakano, H ^b   Taniguchi, K ^c  

^a Kunsan National University   (South Korea)

^b MURATA MANUFACTURING CO LTD   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BAND STRUCTURE; ELECTRIC FIELDS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INTELLIGENT SYSTEMS; IONIC CONDUCTION; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM; TRANSIENT ANALYSIS;

ANISOTROPIC PROPERTY; EMPIRICAL PSEUDOPOTENTIAL METHOD; FERMI'S GOLDEN RULE; REALISTIC BANDS; SCATTERING RATES;

IMPACT IONIZATION;

EID: 1842783026     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.1998.742747     Document Type: Conference Paper

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