Significantly enhanced photocurrent efficiency of a poly(3-hexylthiophene) photoelectrochemical device by doping with the endohedral metallofullerene Dy@C82

Chemical Physics Letters

Volumn 388, Issue 4-6, 2004, Pages 253-258

  Yang, Shangfeng ^a   Fan, Louzhen ^a   Yang, Shihe ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

FULLERENE DERIVATIVE; POLY(3 HEXYLTHIOPHENE); THIOPHENE DERIVATIVE; UNCLASSIFIED DRUG;

ANALYTICAL EQUIPMENT; ARTICLE; ELECTRIC CURRENT; ELECTROCHEMISTRY; ELECTRON TRANSPORT; LANGMUIR BLODGETT FILM; STATISTICAL SIGNIFICANCE;

EID: 1842738612     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2004.03.017     Document Type: Article

References (31)

1. Brabec C.J., Sariciftci N.S., Hummelen J.C. Adv. Funct. Mater. 11:2001;15.
2. Hagfeldt A., Grätzel M. Acc. Chem. Res. 33:2000;269.
3. Schopf G., Kobmehl G. Polythiophene - Electrically Conductive Polymers. 1997;Springer, Berlin.
4. Aruchamy A. Photoelectrochemistry and Photovoltaics of Layered Semiconductors. 1992;Kluwer Academic, Dordrecht.
5. Shinohara H. Rep. Prog. Phys. 63:2000;843. and references therein.
6. Yang S.H. Trends Chem. Phys. 9:2001;31.
7. Allemand P.M., Koch A., Wudl F., Rubin Y., Diederich F., Alvarez M.M., Anz S.J., Whetten R.L. J. Am. Chem. Soc. 113:1991;1050.
8. Suzuki T., Maruyama Y., Akasaka T., Ando W., Kobayashi K., Nagase S. J. Am. Chem. Soc. 116:1994;1359.
9. Yang S.F., Yang S.H. J. Phys. Chem. B. 105:2001;9406. and references therein.
10. Luo C.P., Guldi D.M., Maggini M., Menna E., Mondini S., Kotov N.A., Prato M. Angew. Chem. Int. Ed. 39:2000;3905.
11. Huang H.J., Yang S.H. J. Organomet. Chem. 599:2000;42.
12. Yang S.F., Fan L.Z., Yang S.H. J. Phys. Chem. B. 107:2003;8403.
13. S.F. Yang, L.Z. Fan, S.H. Yang, J. Phys. B 14 (2004) in press
14. Huang H.J., Yang S.H. J. Phys. Chem. B. 102:1998;10196.
15. Zhang W., Shi Y.R., Gan L.B., Huang C.H., Luo H.X., Wu D.G., Li N.Q. J. Phys. Chem. B. 103:1999;675.
16. Imahori H., Yamada H., Nishimura I., Sakata Y. J. Phys. Chem. B. 104:2000;2099.
17. Girotto E.M., Gazotti W.A., De Paoli M.-A. J. Phys. Chem. B. 104:2000;6124.
18. El-Rashiedy O.A., Holdcroft S. J. Phys. Chem. 100:1996;5481.
19. Camaioni N., Garlaschelli L., Geri A., Maggini M., Possamai G., Ridolfi G. J. Mater. Chem. 12:2002;2065.
20. Padinger F., Rittberger R.S., Sariciftci N.S. Adv. Funct. Mater. 13:2003;85.
21. Yu G., Gao J., Hummelen J.C., Wudl F., Heeger A.J. Science. 270:1995;1789.
22. Finklea H.O. Semiconductor Electrodes. 1988;Elsevier, New York.
23. Licht S. Semiconductor Electrodes and Photoelectrochemistry. 2002;Wiley-VCH, Weinheim.
24. Moons E. J. Phys.: Condens. Matter. 14:2002;12235.
25. Shaheen S.E., Brabec C.J., Sariciftci N.S., Padinger F., Fromherz T., Hummelen J.C. Appl. Phys. Lett. 78:2001;841.
26. Liu J., Shi Y.J., Yang Y. Adv. Funct. Mater. 11:2001;420.
27. 82/AA) layers are distinguished by the order. The bracket represents a two-component mixture that is deposited in one layer. For bilayer devices, the symbol (/) denotes the interface.
28. Sariciftci N.S., Smilowitz L., Heeger A.J., Wudl F. Science. 258:1992;1474.
29. Camaioni N., Ridolfi G., Casalbore-Miceli G., Possamai G., Maggini M. Adv. Mater. 14:2002;1735.
30. Brabec C.J., Cravino A., Zerra G., Sariciftci N.S., Kiebooms R., Vanderzande D., Hummelen J.C. J. Phys. Chem. B. 105:2001;1528.
31. Kim Y.S., Liang K., Law K.Y., Whitten D.G. J. Phys. Chem. 98:1994;984.