Study on the etching damage characteristics of PZT thin films after etching in Cl-based plasma

Microelectronic Engineering

Volumn 71, Issue 3-4, 2004, Pages 294-300

  Kim, Kyoung Tae ^a   Kang, Myoung Gu ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

Etching; Etching damage; Ferroelectric properties; Ferroelectric random access memories; Pb(Zr,Ti)O3

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHLORINE; ETCHING; FERROELECTRICITY; PLASMA APPLICATIONS; POLARIZATION; RANDOM ACCESS STORAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCHING DAMAGE; FERROELECTRIC RANDOM ACCESS MEMORIES; PB(ZR,TI)O3;

THIN FILMS;

EID: 1842690422     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.02.001     Document Type: Article

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