Low-resistivity indium tantalum oxide films by magnetron sputtering

Applied Physics A: Materials Science and Processing

Volumn 79, Issue 1, 2004, Pages 109-111

  Ju, H ^a   Hwang, S ^a   Jeong, C O ^b   Park, S H ^a   Choi, J G ^a   Park, C ^c  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Hanbat National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CERAMIC MATERIALS; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GLASS; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; TANTALUM; TRANSPARENCY;

CORNING GLASS; HALL MOBILITY; INDIUM TANTALUM OXIDE;

THIN FILMS;

EID: 1842686610     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-2593-2     Document Type: Article

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