Influence of Mg content on molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors

Journal of Crystal Growth

Volumn 265, Issue 1-2, 2004, Pages 28-33

  Lu, L W ^a,b   Sou, I K ^b   Ge, W K ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

A1. Characterization; A1. Ultraviolet photodetector; A3. Molecular beam epitaxy

Indexed keywords

CAPACITANCE; COMPOSITION; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; EXTRAPOLATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC COMPOUNDS;

PHOTORESPONSE (PR); ULTRAVIOLET PHOTODETECTOR;

PHOTODETECTORS;

EID: 1842580006     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.01.034     Document Type: Article

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