Deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 82, Issue 9, 1997, Pages 4412-4416

  Lu, Liwu ^a,b   Ge, Weikun ^a   Sou, I K ^a   Wang, Y ^a   Wang, J ^a   Ma, Z H ^a   Chen, W S ^a   Wong, G K L ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038638103     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366168     Document Type: Article

References (7)

1. D. Lee, A. Mysyrowicz, A. V. Nurmikko, and B. J. Fitzpatrick, Phys. Rev. Lett. 58, 1475 (1987).
2. Q. Fu, D. Lee, A. V. Nurmikko, L. A. Koloziejski, and R. L. Gunshor, Phys. Rev. B 39, 3173 (1989).
3. I. K. Sou, K. S. Wong, Z. Y. Yang, H. Wang, and G. K. L. Wong, Appl. Phys. Lett. 66, 1915 (1995).
4. I. K. Sou, Z. Yang, J. Mao, Z. H. Ma, K. W. Tong, P. Yu, and G. K. L. Wong, Appl. Phys. Lett. 69, 2519 (1996).
5. I. K. Sou, S. M. Mou, Y. W. Chan, and G. K. L. Wong, Mater. Res. Soc. Symp. Proc. 340, 481 (1994).
6. S. Weiss and R. Kassing, Solid-State Electron. 31, 1733 (1989).
7. G. B. Stringfellow and R. Linnebach, J. Appl. Phys. 51, 2212 (1980).