Leadless SiC pressure sensors for high temperature applications

Proceedings of the International Instrumentation Symposium

Volumn 47, Issue , 2001, Pages 267-275

  Ned, Alexander A ^a   Kurtz, Anthony D ^a   Masheeb, Fawzia ^a   Beheim, Glenn ^b  

^a Kulite Semiconductor Products Inc   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

High Temperature; Leadless; MEMS; Pressure; Rugged; Sensor; SiC; Transducer

Indexed keywords

HERMETIC DEVICES; HIGH TEMPERATURE EFFECTS; LEAD; MICROELECTROMECHANICAL DEVICES; PIEZOELECTRICITY; PRESSURE EFFECTS; PRESSURE TRANSDUCERS; SILICON CARBIDE; THERMAL EFFECTS;

HIGH TEMPERATURE; PRESSURE SENSORS; RUGGED; TRANSDUCER;

CHEMICAL SENSORS;

EID: 1842538075     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. L.G. Matus, J.A. Powell, and C.S. Salupo. Appl. Phys. Lett., vol. 59, pp 1770-1772, 1991
2. I.V. Rapatskaya, G.E. Rudanshevskii, M.G. Kasagnova, M.I. Islitsin, M.B. Reifman, and E.F. Fedotova. Sov. Phys. Solid State (USA) Vol. 9 (1968) p.2833.
3. Robert S. Okojie, Alexander A. Ned, Anthony D. Kurtz and William N. Carr, "Characterization of Highly Doped n- and p- Type 6H-SiC Piezorestors", IEEE Transactions on Electron Devices, Vol. 45, No. 4 April 1998.
4. Alexander A. Ned, Dr. Anthony D. Kurtz, Fawzia Masheeb, "High temperature 6H-SiC Pressure Sensors with Improved Performance", International High Temperature Conference, Cleveland, OH, May 1999
5. TH International Instrumentation Society, Albuquerque, NM May 1999
6. A.D. Kurtz, A.N. Ned, U.S. Patent #5,955,771 "Sensors For Use In High Vibrational Applications And Methods For Fabricating Same" issued to Kulite Semiconductor Products, Leonia, NJ 9/21/99
7. A.D. Kurtz, U.S. Patent #6,058,782 "Hermetically Sealed Ultra High Temperature Silicon Carbide Pressure transducers and Method For Fabricating The Same" issued to Kulite semiconductor Products, Inc., Leonia, NJ 5/9/00