Determination of ultra-trace impurities in high purity gallium arsenide by inductively coupled plasma mass spectrometry after volatilization of matrix

Journal of Analytical Atomic Spectrometry

Volumn 19, Issue 3, 2004, Pages 407-409

  Sahayam, A C ^a   Jiang, Shiuh Jen ^b   Wan, Chia Ching ^b  

^a National Centre for Compositional Characterisation of Materials (CCCM)   (India)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHROMIUM; COMPUTATIONAL METHODS; IMPURITIES; IRON; MASS SPECTROMETRY; POSITIVE IONS; SILICON WAFERS; TRACE ANALYSIS; VAPORIZATION; VAPORS; X RAY ANALYSIS;

AQUA REGIA; HIGH PURITY GALLIUM ARSENIDE; INDUCTIVELY COUPLED PLASMA MASS SPECTROMETER; LIMITS OF DETECTION; TOTAL REFLECTION X RAY FLUORESCENCE; ULTRATRACE IMPURITIES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 1842535351     PISSN: 02679477     EISSN: None     Source Type: Journal    
DOI: 10.1039/b312414m     Document Type: Article

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