Use of lower-end technology etch platforms for high etch loads

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5256, Issue 2, 2003, Pages 724-735

  Nemelka, Jefferson O ^a  

^a DuPont Photomasks Inc   (United States)

Author keywords

EAPSM; Etch; High Load; MoSi

Indexed keywords

ELECTRIC POTENTIAL; ELECTRODES; ETCHING; HELIUM; INDUCTIVELY COUPLED PLASMA; MOLYBDENUM COMPOUNDS; PHASE SHIFT; PHOTONS;

EAPSM; ETCH; HIGH LOADS; MOSI;

MASKS;

EID: 1842527045     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.518067     Document Type: Conference Paper

References (1)

1. Plumhoff, Jason, et. al., "Investigation of MoSi Etch Processes for Embedded Attenuating Phase Shift Mask Applications Utilizing a Next Generation ICP Source", Proc. SPIE, Vol. 4562, p. 694-703, 2002.