SCOPUS 정보 검색 플랫폼

Scripta Materialia

Volumn 50, Issue 11, 2004, Pages 1407-1411

Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu

(4) Qian, L H a Lu, Q H a Kong, W J b Lu, K a

a INSTITUTE OF METAL RESEARCH (China)

b INSTITUTE OF PHYSICS (China)

Author keywords

Electrical resistivity; Nanocrystalline Cu; Relaxation of grain boundary and magnetron sputtering

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; ELECTRONS; GRAIN BOUNDARIES; LATTICE CONSTANTS; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; POLYCRYSTALLINE MATERIALS; STRAIN;

NANOCRYSTALLINE CU; RELAXATION OF GRAIN BOUNDARY;

COPPER;

EID: 1842455733 PISSN: 13596462 EISSN: None Source Type: Journal
DOI: 10.1016/j.scriptamat.2004.02.026 Document Type: Article

Times cited : (78)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.