Study of P-Type Carbon Doping on In0.53Ga0.47As, In0.52Al0.2Ga0.28As and In 0.52Al0.48As

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5260, Issue , 2003, Pages 446-449

  Yan, J ^a,b   Ru, G ^a   Gong, Y ^a   Choa, F S ^a  

^a Baltimore County   (United States)

^b NONE   (United States)

Author keywords

C In ratio; Carbon doping; InAlAs; InAlGaAs; InGaAs; MOCVD growth; V III ratio

Indexed keywords

ALUMINUM; CARBON; DOPING (ADDITIVES); HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; OPTOELECTRONIC DEVICES; PASSIVATION; TUNNEL JUNCTIONS;

C/IN RATIO; CARBON DOPING; INALAS; INALGAAS; INGAAS; MOCVD GROWTH; V/III RATIO;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 1842455342     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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