Transport phenomena in porous low-k dielectrics

Semiconductor International

Volumn 25, Issue 6, 2002, Pages 105-112

  Thomas, Michael E ^a   Iwamoto, Nancy ^a   Smith, Douglas ^b   Wallace, Stephen ^b  

^a HONEYWELL   (United States)

^b NanoPore Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSED PORES; GAS TRANSPORT; OPEN PORES; POROUS MATERIAL MATRIX;

APPROXIMATION THEORY; HYDROGEN INORGANIC COMPOUNDS; MATRIX ALGEBRA; PERMITTIVITY; PORE SIZE; POROSITY; POROUS MATERIALS; STRENGTH OF MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC MATERIALS;

EID: 1842439409     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (7)

1. 2001 International Technology Roadmap for Semiconductors, SIA
2. N. Iwamoto, "Understanding Modulus Trends in Ultra Low-k Dielectric Materials, Through the Use of Molecular Modeling," to be presented at the 52nd ECTC, May 2002, San Diego.
3. Honeywell internal communication.
4. R.M. Barrer, Diffusion in and Through Solids, Cambridge University Press, 1941.
5. W. Jost, Diffusion, Third Edition, Academic Press, 1960.
6. H. Daynes, Proc. Royal Society, Vol. A, No. 97, p. 286, 1920.
7. W. Jost, Ibid, p. 298.