Dielectric relaxation in Ge1-xSe2Pbx (x=0, 0.2 and 0.6) nano-crystalline system

Materials Chemistry and Physics

Volumn 85, Issue 1, 2004, Pages 20-26

  Sedeek, K ^a   Adam, A ^a   Wahab, L A ^b   Hafez, F M ^a  

^a Assiut Branch   (Egypt)

^b NATIONAL CENTER FOR RADIATION RESEARCH AND TECHNOLOGY   (Egypt)

Author keywords

Chalcogenide; Dielectric relaxation; Nanocrystalline

Indexed keywords

DIELECTRIC LOSSES; DIELECTRIC RELAXATION; ELECTRIC CONDUCTIVITY; ENERGY DISPERSIVE SPECTROSCOPY; NANOSTRUCTURED MATERIALS; OHMIC CONTACTS; PHASE TRANSITIONS; SILICA; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

CHALCOGENIDE; SILICA TUBES;

GERMANIUM COMPOUNDS;

EID: 1842418434     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2003.11.035     Document Type: Article

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