Numerical study of transport phenomena in the THM growth of compound semiconductor crystal

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1779-1784

  Okano, Yasunori ^a   Nishino, Shin Saku ^a   Ohkubo, Shun Suke ^a   Dost, Sadik ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b UNIVERSITY OF VICTORIA   (Canada)

Author keywords

A1. Computer simulation; A1. Fluid flows; A1. Interfaces; A1. Mass transfer; A2. Growth from solutions; B2. Semiconducting gallium compounds

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; FLOW OF FLUIDS; INTERFACES (MATERIALS); MASS TRANSFER; NATURAL CONVECTION; THERMAL EFFECTS;

TRAVELING HEATER METHOD (THM);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 18344412554     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02339-9     Document Type: Article

References (7)