Self-assembling CdSe, ZnCdSe and CdTe quantum dots on ZnSe(100) epilayers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 1104-1105

  Matsumura, Nobuo ^a   Tai, Eiji ^a   Kimura, Yoshihisa ^a   Saito, Takashi ^a   Ohira, Masao ^a   Saraie, Junji ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CdSe; CdTe; Quantum dots; Self assembling; ZnCdSe

Indexed keywords

ATOMIC FORCE MICROSCOPY; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; SURFACE STRUCTURE;

ATOMIC LAYER EPITAXIAL METHOD; CADMIUM SELENIDE; SOLID PHASE REACTION METHOD; ZINC CADMIUM SELENIDE; ZINC SELENIDE EPILAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033732788     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1104     Document Type: Article

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