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Journal of Crystal Growth

Volumn 193, Issue 1-2, 1998, Pages 28-32

Novel In0.49Ga0.51P/(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy

(8) Chen, J X a Li, A Z a Yang, Q K a Lin, C a Ren, Y C a Jin, S R a Li, C C a Qi, M a

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC PROPERTIES; HETEROJUNCTIONS; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

DELTA DOPING TECHNIQUE; HALL MOBILITY; HOMOGENEITY; IONIZED IMPURITY SCATTERING MECHANISM; TWO DIMENSIONAL HOLE GAS; VALENCE BAND OFFSET RATIO;

SEMICONDUCTOR GROWTH;

EID: 0032475343 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00479-5 Document Type: Article

Times cited : (1)

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