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Volumn 237-240, Issue PART 1, 2005, Pages 491-496

The role of intrinsic defects for the diffusion of Ag and Cu in CdTe

Author keywords

Defect reactions; II VI semiconductors; Intrinsic defects; Stoichiometry

Indexed keywords

COPPER; CRYSTAL DEFECTS; SEMICONDUCTING CADMIUM TELLURIDE; SILVER; STOICHIOMETRY; VAPOR PRESSURE;

EID: 18244380989     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.237-240.491     Document Type: Conference Paper
Times cited : (11)

References (10)
  • 4
    • 0345873481 scopus 로고    scopus 로고
    • H. Wolf, F. Wagner, Th. Wichert, and ISOLDE Collaboration, Physica B, 340-342 (2003) 275
    • (2003) , vol.340-342 , pp. 275
    • Wolf, H.1    Wagner, F.2    Wichert, Th.3
  • 6
    • 30844461125 scopus 로고    scopus 로고
    • H. Wolf, F. Wagner, and Th. Wichert, to be published
    • H. Wolf, F. Wagner, and Th. Wichert, to be published


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.