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Volumn 237-240, Issue PART 1, 2005, Pages 491-496
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The role of intrinsic defects for the diffusion of Ag and Cu in CdTe
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Author keywords
Defect reactions; II VI semiconductors; Intrinsic defects; Stoichiometry
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Indexed keywords
COPPER;
CRYSTAL DEFECTS;
SEMICONDUCTING CADMIUM TELLURIDE;
SILVER;
STOICHIOMETRY;
VAPOR PRESSURE;
DEFECT REACTIONS;
INTRINSIC DEFECTS;
DIFFUSION;
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EID: 18244380989
PISSN: 10120386
EISSN: 16629507
Source Type: Journal
DOI: 10.4028/www.scientific.net/ddf.237-240.491 Document Type: Conference Paper |
Times cited : (11)
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References (10)
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