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Volumn 17, Issue 7, 2005, Pages 1636-1645

RE5Co4Si14(RE = Ho, Er, Tm, Yb): Silicides grown from Ga flux showing exceptional resistance to chemical and thermal attack

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; CHEMICAL RESISTANCE; CRYSTAL GROWTH; CRYSTALLIZATION; CRYSTALS; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM; HEAT RESISTANCE; INORGANIC ACIDS; LATTICE CONSTANTS; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); TRANSITION METALS; X RAY CRYSTALLOGRAPHY; X RAY DIFFRACTION ANALYSIS;

EID: 18144426752     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm047959w     Document Type: Article
Times cited : (18)

References (57)
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    • (1978)
    • Yarovets, V.I.1
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    • note
    • The different levels of brightness are from charging effects from the electron beam striking the thicker oxide layer on the (100) face. The (101) face (as well as other crystal faces) having a thinner oxide coating does not charge as much and is therefore not as bright.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.