Stabilization of β-SiB3 from liquid Ga: A boron-rich binary semiconductor resistant to high-temperature air oxidation

Angewandte Chemie - International Edition

Volumn 42, Issue 17, 2003, Pages 1929-1932

  Salvador, James R ^a   Bilc, Daniel ^a   Mahanti, S D ^a   Kanatzidis, Mercouri G ^a  

^a MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

Boron; Gallium; Semiconductors; Silicon

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; OXIDATION; STOICHIOMETRY;

ATOMIC DISTRIBUTION;

SILICON COMPOUNDS;

BORON; SILICON; DYES, REAGENTS, INDICATORS, MARKERS AND BUFFERS; GALLIUM; SILICON DERIVATIVE;

ARTICLE; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; HIGH TEMPERATURE; OXIDATION; SEMICONDUCTOR; STOICHIOMETRY; CHEMISTRY; HEAT; OXIDATION REDUCTION REACTION; X RAY DIFFRACTION;

BORON; GALLIUM; HEAT; INDICATORS AND REAGENTS; OXIDATION-REDUCTION; SEMICONDUCTORS; SILICON COMPOUNDS; X-RAY DIFFRACTION;

EID: 0037878078     PISSN: 14337851     EISSN: None     Source Type: Journal    
DOI: 10.1002/anie.200219986     Document Type: Article

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