Analysis of instability in a critical dimension bar due to focus and exposure

Materials Science in Semiconductor Processing

Volumn 8, Issue 4, 2005, Pages 483-490

  Kuo, Yang Kuao ^a   Chao, Chuen Guang ^a   Lin, Chi Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Exposure dose; Focus; Line width

Indexed keywords

ANTIREFLECTION COATINGS; CONDUCTIVE FILMS; FOCUSING; NON NEWTONIAN FLOW; PHOTORESISTS; RADIATION EFFECTS; SCANNING ELECTRON MICROSCOPY; SHEAR STRESS; SILICON WAFERS; SPIN COATING; ULTRAVIOLET RADIATION; VISCOSITY;

EXPOSURE DOSE; LINE WIDTH; PHOTO ACTIVE COMPONENT (PAC); SHEAR RATE;

PHOTOLITHOGRAPHY;

EID: 18144425771     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.10.001     Document Type: Article

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