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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 339, Issue 6, 2005, Pages 497-502

Microstructure and polarity of epitaxial ZnO films grown on LSAT(111) substrate studied by transmission electron microscopy

(8) Liu, Yu Zi a Ying, M J a Du, X L a Zeng, Z Q a Mei, Z X a Jia, J F a Xue, Q K a Zhang, Z b

a INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

b BEIJING UNIVERSITY OF TECHNOLOGY (China)

Author keywords

Microstructure; TEM; Zinc oxide

Indexed keywords

ALUMINUM COMPOUNDS; GROWTH TEMPERATURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; LANTHANUM COMPOUNDS; METALLIC FILMS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; TEMPERATURE DISTRIBUTION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TRANSMISSIONS;

DISLOCATION STRUCTURES; GROWTH-TEMPERATURE DEPENDENCE; RF PLASMA; ROTATION DOMAIN; STRUCTURAL CHARACTERISTICS; ZNO FILMS; ZNO THIN FILM;

ZINC OXIDE;

LANTHANUM; STRONTIUM; TANTALUM; ZINC OXIDE;

ARTICLE; FILM; ROTATION; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 18144366950 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/j.physleta.2005.03.081 Document Type: Article

Times cited : (8)

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