High power AlGaN/GaN heterojunction FETs for base station applications

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 31-32

  Ando, Y ^a   Okamoto, Y ^a   Nakayama, T ^a   Inoue, T ^a   Hataya, K ^a   Miyamoto, H ^a   Senda, M ^a   Hirata, K ^a   Kosaki, M ^a   Shibata, N ^a   Kuzuhara, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BASE STATION APPLICATIONS; CERAMIC CARRIERS; OHMIC METALS; SIN FILMS;

ELECTRIC BREAKDOWN; ELECTRON BEAM LITHOGRAPHY; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

FIELD EFFECT TRANSISTORS;

EID: 18044398203     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367769     Document Type: Conference Paper

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4. T.Inoue, Y.Ando, K.Kasahara, Y.Okamoto, T.Nakayama, H.Miyamoto, M.Kuzuhara, IEICE Trans.Electron., vol.E86-C, p.2065, 2003.
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