High temperature X-ray absorption and valence band spectroscopy study of the Si(100) surface

Journal of Electron Spectroscopy and Related Phenomena

Volumn 114-116, Issue , 2001, Pages 471-475

  Dhanak, V R ^a   Santoni, A ^b   Grill, L ^c   Petaccia, L ^c  

^a DARESBURY LABORATORY   (United Kingdom)

^b ENEA   (Italy)

^c LABORATORIO TASC   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; PHASE TRANSITIONS; PHOTOEMISSION; X RAY SPECTROSCOPY;

HIGH TEMPERATURE X RAY ABSORPTION; VALENCE BAND PHOTOEMISSION SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 17944390165     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0368-2048(00)00247-4     Document Type: Article

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