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Volumn 382, Issue 1-3, 1997, Pages 336-348

Photoemission and photoabsorption study of the high-temperature phases of the Ge(111) surface

Author keywords

Germanium; Photoelectron spectroscopy; Surface melting

Indexed keywords

ABSORPTION SPECTROSCOPY; MELTING; METALLIZING; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SURFACE STRUCTURE; THERMAL EFFECTS;

EID: 0031166138     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00207-0     Document Type: Article
Times cited : (32)

References (41)
  • 11
    • 30244561845 scopus 로고
    • Thesis, University of Leiden
    • R.G. van Silfhout, Thesis, University of Leiden, 1992.
    • (1992)
    • Van Silfhout, R.G.1
  • 26
    • 30244433423 scopus 로고
    • PhD thesis, University of Basel
    • G. Indlekofer, PhD thesis, University of Basel, 1987.
    • (1987)
    • Indlekofer, G.1
  • 27
    • 30244486113 scopus 로고    scopus 로고
    • note
    • As reported in Ref. [13], we have assumed that, because of the increased density of the surface metallic layer above 1050 K [7,9], the electron escape depth is 80% of that in the solid semiconducting bulk [28,29,30,31], This value is the same as assumed in Ref. [7]. However, taking the same escape depth as the bulk, we obtain a metallic overlayer thickness of 2.1 ML from core-level data (or 2.5 ML from the valence-band data), while assuming a stronger reduction of the electron escape depth (i.e. the 60% of its bulk solid value) we have a metallic overlayer thickness of 1.3 ML (or 1.5 ML). These numbers are again in agreement with theoretical predictions [7,12] and experimental measurements [3,6.9] of the overlayer thickness which undergoes the high-temperature phase transition.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.