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As reported in Ref. [13], we have assumed that, because of the increased density of the surface metallic layer above 1050 K [7,9], the electron escape depth is 80% of that in the solid semiconducting bulk [28,29,30,31], This value is the same as assumed in Ref. [7]. However, taking the same escape depth as the bulk, we obtain a metallic overlayer thickness of 2.1 ML from core-level data (or 2.5 ML from the valence-band data), while assuming a stronger reduction of the electron escape depth (i.e. the 60% of its bulk solid value) we have a metallic overlayer thickness of 1.3 ML (or 1.5 ML). These numbers are again in agreement with theoretical predictions [7,12] and experimental measurements [3,6.9] of the overlayer thickness which undergoes the high-temperature phase transition.
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