PZT ferroelectric thin films prepared by sputtering at pure oxygen and high pressure

Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society

Volumn 33, Issue 3, 2005, Pages 358-361

  Zeng, Yike ^a   Jiang, Shenglin ^a   Deng, Chuanyi ^a   Chen, Shi ^a   Liu, Meidong ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Current voltage characteristic; Ferroelectric thin film; Hysteresis loops; Lead zirconate titanate; Sputtering

Indexed keywords

CERAMIC MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; FERROELECTRIC MATERIALS; FILM PREPARATION; IN SITU PROCESSING; MAGNETRON SPUTTERING; OXYGEN; SINTERING; X RAY DIFFRACTION ANALYSIS;

CERAMIC TARGET; HIGH PRESSURE SPUTTERING; HYSTERESIS LOOPS; LEAD ZIRCONATE TITANATE (PZT); PURE OXYGEN;

FERROELECTRIC THIN FILMS;

EID: 17944382707     PISSN: 04545648     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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