Radiation hardness of VA1 with submicron process technology

IEEE Transactions on Nuclear Science

Volumn 48, Issue 3 I, 2001, Pages 440-443

  Yokoyama, M ^a   Aihara, H ^a   Hazumi, M ^b   Ishino, H ^c   Kaneko, J ^c   Li, Y ^d   Marlow, D ^e   Mikkelsen, S ^f   Nygard E ^f   Tajima, H ^a   Talebi, J ^f   Varner, G ^d   Yamamoto, H ^d  

^a UNIVERSITY OF TOKYO   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d UNIVERSITY OF HAWAII   (United States)

^e PRINCETON UNIVERSITY   (United States)

^f Intgd Detector and Electronics AS   (Norway)

Author keywords

Integrated circuit radiation effects; MOS analog integrated circuits; Radiation detector circuits; Radiation hardening; Silicon radiation detectors

Indexed keywords

GAIN MEASUREMENT; HARDNESS; MOSFET DEVICES; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTING SILICON;

RADIATION HARDNENING;

VLSI CIRCUITS;

EID: 17944374241     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.940096     Document Type: Conference Paper

References (9)

1. Performance of Belle silicon vertex detector
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3. Radiation susceptibility of a nonradiation-hard 1.2 μm CMOS transistors
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5. VIKING, a CMOS low noise monolithic 128 channel frontend for Si-strip detector readout
6. Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors