Long-range disorder effects on the GaAs(0 0 1) β2(2 × 4) surface

Surface Science

Volumn 582, Issue 1-3, 2005, Pages 189-201

  Pashley, D W ^a   Neave, J H ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Antiphase boundaries; Gallium arsenide; Long range order; Reflection high energy electron diffraction (RHEED); Scanning tunnelling microscopy (STM); Surface structure

Indexed keywords

ARSENIC; DIMERS; FILM GROWTH; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

ANTIPHASE BOUNDARIES; DISORDER BOUNDARIES; GRAZING INCIDENCE X-RAY DIFFRACTION; LONG RANGE ORDERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 17944372077     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.03.015     Document Type: Article

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