Photoelectric and optical properties of pentacene films deposited on n-Si by thermal evaporation

Thin Solid Films

Volumn 420-421, Issue , 2002, Pages 19-22

  Kim, S S ^a   Park, S P ^a   Kim, J H ^a   Im, S ^a  

^a Yonsei University   (South Korea)

Author keywords

Absorption; Current leakage; Ellipsometry; Pentacene film; Photoelectric

Indexed keywords

DEPOSITION; ELLIPSOMETRY; EVAPORATION; LEAKAGE CURRENTS; LIGHT ABSORPTION; OPTICAL PROPERTIES; PHOTOELECTRICITY; SEMICONDUCTING ORGANIC COMPOUNDS;

PENTACENE FILMS;

SEMICONDUCTING FILMS;

EID: 17744411317     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00653-3     Document Type: Conference Paper

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