The statistical shift model for the Meyer-Neldel rule

Defect and Diffusion Forum

Volumn 192-193, Issue , 2001, Pages 1-14

  Overhof, Harald ^a   Thomas, Peter ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

a Si:H; DC Electronic Transport; Meyer Neldel Rule; Mobility Edge; Staebler Wronski Effect; Statistical Shift

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; ELECTRONIC DENSITY OF STATES; HYDROGENATION; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; STATISTICAL METHODS;

SILICON FILMS;

AMORPHOUS SILICON;

EID: 17744408661     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.192-193.1     Document Type: Conference Paper

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