International comparison of eight semiconductor lasers stabilized on 127I2 at λ≈633 nm

Metrologia

Volumn 37, Issue 4, 2000, Pages 329-339

  Zarka, A ^a   Abou Zeid, A ^b   Chagniot, D ^c   Chartier, J M ^a   Cip O ^d   Cliche, J F ⁱ   Edwards, C S ^e   Imkenberg, F ^b   Jedlicka P ^d   Kabel, B ^b   Lassila, A ^f   Lazar, J ^d   Merimaa, M ^g   Millerioux, Y ^c   Simonsen, H ^h   Tetu M ⁱ   Wallerand, J P ^c  

^a PAVILLON DE BRETEUIL   (France)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^c Inst National de Métrologie   (France)

^d INSTITUTE OF SCIENTIFIC INSTRUMENTS   (Czech Republic)

^e NATIONAL PHYSICAL LABORATORY   (United Kingdom)

^f CENTRE FOR METROLOGY AND ACCREDITATION MIKES   (Finland)

^g AALTO UNIVERSITY   (Finland)

^h Building 307   (Finland)

ⁱ NONE

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; FREQUENCY MODULATION; FREQUENCY STABILITY; HELIUM NEON LASERS; IODINE;

EXTENDED-CAVITY LASERS (ECL); EXTRA-CAVITY SATURATION SPECTROSCOPY; FREQUENCY-MODULATD SPECTROSCOPY;

SEMICONDUCTOR LASERS;

EID: 17744394050     PISSN: 00261394     EISSN: None     Source Type: Journal    
DOI: 10.1088/0026-1394/37/4/11     Document Type: Article

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