Application of aluminum oxide and ta-C thin films deposited at room temperature by PLD in RF-MEMS fabrication

Thin Solid Films

Volumn 482, Issue 1-2, 2005, Pages 237-241

  Orlianges, J C ^a   Pothier, A ^b   Mercier, D ^b   Blondy, P ^b   Champeaux, C ^a   Catherinot, A ^a   De Barros, M I ^c   Pavant, S ^c  

^a UNIVERSITY OF LIMOGES   (France)

^b Centre National de la Recherche Scientifique   (France)

^c LABORATOIRE DE TRIBOLOGIE ET DYNAMIQUE DES SYSTÈMES   (France)

Author keywords

Aluminium oxide; DLC; Doped ta C; Electrical properties; Mechanical properties; Pulsed laser deposition; RF MEMS; Tetrahedral amorphous carbon

Indexed keywords

ALUMINA; AMORPHOUS MATERIALS; DIELECTRIC MATERIALS; ELASTIC MODULI; ELECTRIC PROPERTIES; FABRICATION; MECHANICAL PROPERTIES; MICROELECTROMECHANICAL DEVICES; PULSED LASER DEPOSITION; SIGNAL PROCESSING;

DLC; DOPED TA-C; RF-MEMS; TETRAHEDRAL AMORPHOUS CARBON;

THIN FILMS;

EID: 17744370758     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.143     Document Type: Conference Paper

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