Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-photovoltaic application

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 124-127

  Gevorkyan, V A ^a   Aroutiounian, V M ^a   Gambaryan, K M ^a   Kazaryan, M S ^a   Touryan, K J ^b   Wanlass, M W ^b  

^a YEREVAN STATE UNIVERSITY   (Armenia)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

IR photodetectors; Liquid phase electroepitaxy; Thermophotovoltaic converters

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; INFRARED DETECTORS; OPTICAL FILTERS; POWER CONVERTERS; SEMICONDUCTOR DIODES; SOLAR CELLS;

IR-PHOTODETECTORS; LIQUID PHASE ELECTROEPITAXY; THERMOPHOTOVOLTAIC CONVERTERS;

SEMICONDUCTING INDIUM;

EID: 17644439837     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.117     Document Type: Conference Paper

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