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Physica B: Condensed Matter

Volumn 227, Issue 1-4, 1996, Pages 310-314

Electron transport in the quantum hall regime in strained si/sige

(1) Ismail, K a,b

a IBM T J WATSON RESEARCH CENTER (United States)

b CAIRO UNIVERSITY (Egypt)

Author keywords

Electron transport; QHE; Si sige

Indexed keywords

EPITAXIAL GROWTH; HALL EFFECT; HETEROJUNCTIONS; QUANTUM THEORY; SILICON;

HETEROSTRUCTURES; QUANTUM HALL REGIME;

ELECTRON TRANSPORT PROPERTIES;

EID: 0030234356 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/0921-4526(96)00428-0 Document Type: Article

Times cited : (8)

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