SEE and TID results for a commercially fabricated radiation hardened Field Programmable Gate Array

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2004, Pages 85-87

  Hafer, C ^a   Lake, R ^a   Jordan, A ^a   Farris, T ^a  

^a Gaisler Research   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AEROSPACE APPLICATIONS; ARGON; BIT ERROR RATE; CYCLOTRONS; FORMAL LOGIC; GOLD; INTEGRATED CIRCUITS; IONIZATION; STATIC RANDOM ACCESS STORAGE;

LINEAR ENERGY TRANSFER (LET); PROGRAMMABLE CLOCKS; SINGLE EVENT LATCHUP (SEL); TOTAL IONIZING DOSE (TID);

FIELD PROGRAMMABLE GATE ARRAYS;

EID: 17644362252     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. th NASA Symp. On VLSI Design, 1998, 4.3.1.
2. J. V. Osborn, R. C. Lacoe, D. C. Mayer, and G. Yabiku, "Total Dose Hardness of Three Commercial CMOS Microelectronic Foundries," IEEE Trans. Nucl. Sci., vol. 45, 1998.
3. J.M. Benedetto, D.B. Kerwin "Total Dose Hardening Of Deep Sub-Micron Process for Mixed-Signal Applications", GOMAC Digest of Papers, 2001, pp. 539-542.
4. D.B. Kerwin, J.M. Benedetto, "Radiation Hardening Of Submicron CMOS Wafers From Commercial Foundries", GOMAC Digest of Papers, in Arlington, Virginia, March 16, 1998, pp. 109-112