Si/SiGe HBTs for application in low power ICs

Solid-State Electronics

Volumn 39, Issue 4 SPEC. ISS., 1996, Pages 471-480

  Behammer, D ^a   Albers, J N ^b   Konig U ^c   Temmler, D ^d   Knoll, D ^d  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b MICRAM MICROELECTRONIC GMBH   (Germany)

^c DAIMLER AG   (Germany)

^d Institute of Semiconductor Physics   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TECHNOLOGY;

HIGH SPEED APPLICATION; LOW NOISE APPLICATION; LOW POWER CIRCUITS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030128244     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00165-4     Document Type: Article

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