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physica status solidi (a)

Volumn 56, Issue 1, 1979, Pages 213-223

Precipitation of oxygen in dislocation‐free silicon

(4) Tempelhoff, K a,b Spiegelberg, F a,b Gleichmann, R b Wruck, D a,b

a Zentralinstitut fur Elektronenphysik (Germany)

b Saxonian Academy of Sciences (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0018544771 PISSN: 00318965 EISSN: 1521396X Source Type: Journal
DOI: 10.1002/pssa.2210560123 Document Type: Article

Times cited : (97)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.