1.2 μm band GaInAs/GaAs high-density multiple-wavelength vertical cavity surface emitting laser array

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Uchiyama, Yasuhiro ^a   Kondo, Takashi ^a   Takeda, Kazutaka ^a   Matsutani, Akihiro ^a   Uchida, Takeshi ^a   Miyamoto, Tomoyuki ^a   Koyama, Fumio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

(100) GaAs substrate; GaInAs GaAs; Highly strained; Laser array; Semiconductor laser; Surface emitting laser; VCSEL; Wavelength division multiplexing

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL INTERCONNECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; ULTRASHORT PULSES; WAVELENGTH DIVISION MULTIPLEXING;

(100) GAAS SUBSTRATE; GAINAS/GAAS; HIGHLY STRAINED; LASER ARRAY; SURFACE EMITTING LASER; VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL);

SEMICONDUCTOR LASERS;

EID: 17444415027     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L214     Document Type: Article

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