Aqueous CSD of ferroelectric Bi 3.5la 0.5Ti 3O 12 (BLT) thin films

Integrated Ferroelectrics

Volumn 62, Issue , 2004, Pages 205-209

  Hardy, A ^a   Nelis, D ^a   Vanhoyland, G ^a   Van Bael, M K ^a   Mullens, J ^a   Van Poucke, L C ^a   D'Haen, J ^b   Wouters, D J ^c  

^a HASSELT UNIVERSITY   (Belgium)

^b HASSELT UNIVERSITY   (Belgium)

^c IMEC   (Belgium)

Author keywords

(Bi,La) 4Ti 3O 12; Aqueous solution gel; Bi 3+ excess; Chemical solution deposition

Indexed keywords

(BI,LA)4TI3O12; AQUEOUS SOLUTION-GELS; BI3+ EXCESS; CHEMICAL SOLUTION DEPOSITION (CSD);

BISMUTH COMPOUNDS; CRYSTALLIZERS; DEPOSITION; FERROELECTRICITY; GRAIN SIZE AND SHAPE; SOLUTIONS; THIN FILMS;

FERROELECTRIC MATERIALS;

EID: 17444395103     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490457866     Document Type: Article

References (3)

1. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, "Lanthanum-substituted bismuth titanate for use in non-volatile memories," Nature 401, 682-684 (1999).
2. 12 by a new aqueous solution-gel route," J. Eur. Ceram. Soc. (2003) (in press).
3. M. K. Van Bael, D. Nelis, A. Hardy, D. Mondelaers, K. Van Werde, J. D'Haen, G. Vanhoyland, H. Van Den Rul, J. Mullens, L. C. Van Poucke, F. Frcderix, and D. J. Wouters, "Aqueous chemical solution deposition of ferroelectric thin films," Integr. Ferroelectr. 45, 113-122 (2002).