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Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 133-138

Dimer structures of Ge/Si(001) and Sb/Si(001) studied by medium-energy ion scattering

(3) Sumitomo, Koji a Nishioka, Takashi a,b Ogino, Toshio a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

b NTT CORPORATION (Japan)

Author keywords

Ge Si(001); Medium energy ion scattering; Sb Si(001)

Indexed keywords

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; IONS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE PHENOMENA; SURFACE STRUCTURE; SURFACE TREATMENT;

DIMERS; MEDIUM ENERGY ION SCATTERING (MEIS); SURFACE RECONSTRUCTION; THERMAL VIBRATION;

SEMICONDUCTOR JUNCTIONS;

EID: 17344393078 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00039-7 Document Type: Article

Times cited : (5)

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