The inclusion of secondary electrons and Bremsstrahlung X-rays in an electron beam resist model

Microelectronic Engineering

Volumn 61-62, Issue , 2002, Pages 343-349

  Ivin, V V ^a   Silakov, M V ^a   Kozlov, D S ^a   Nordquist, K J ^b   Lu, B ^b   Resnick, D J ^b  

^a SOFT TEC   (Russian Federation)

^b MOTOROLA INC   (United States)

Author keywords

Beam PSF; Bremsstrahlung X ray; E beam lithography; Monte Carlo simulations; Proximity effect; Resist development

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; INCLUSIONS; MATHEMATICAL MODELS; MICROELECTRONICS; MONTE CARLO METHODS; PHOTORESISTS; SECONDARY EMISSION; X RAY ANALYSIS;

SECONDARY ELECTRONS;

ELECTRON BEAM LITHOGRAPHY;

EID: 17344386057     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00531-2     Document Type: Conference Paper

References (6)