The comparative analysis of S and Se in an (NH4)2(S,Se)1.08-treated GaAs (100) surface

Surface and Coatings Technology

Volumn 100-101, Issue 1-3, 1998, Pages 222-228

  Sa, Seung Hoon ^a   Kang, Min Gu ^a   Park, Hyung Ho ^a   Oh, Kyung Hui ^b  

^a Yonsei University   (South Korea)

^b Natl Institute of Tech and Quality   (South Korea)

Author keywords

(NH4)2(S,Se)1.08 solution; GaAs; Passivation effect; X ray photoelectron spectroscopy

Indexed keywords

AMMONIUM COMPOUNDS; CHEMICAL BONDS; DEGRADATION; EVAPORATION; PASSIVATION; SELENIUM; SEMICONDUCTING GALLIUM ARSENIDE; SULFUR; SURFACE STRUCTURE; THERMAL EFFECTS; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

BOND EXCHANGE;

SURFACE TREATMENT;

EID: 17344381991     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00618-X     Document Type: Article

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